Journal of Crystal Growth, Vol.226, No.1, 57-61, 2001
Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure
The distribution of mixed phases and its dependence on the polarity of cubic GaN epilayers are investigated by conventional X-ray pole figure and grazing incident diffraction (GID) pole figure. The hexagonal inclusions and cubic twins can be classified into two portions: one is formed with strict crystalline orientations, the other with crystalline misorientations. The former can be measured by conventional pole figures which reveal that the density of lamellate hexagonal grains and cubic twins located on (1 1 1)(Ga) and ((1) over bar (1) over bar1)(Ga) along [1 (1) over bar 0] direction are higher than those on ((1) over bar 1 1), and (1 (1) over bar 1)(N) along [110] direction. However, the low signals from tiny mixed phases with crystalline misorientations, detected by GID pole figures, distribute in a larger phi region near the [1 1 0] and [(1) over bar (1) over bar 0] directions with much weaker intensity, and in a smaller phi region near the [1 (1) over bar 0] and [(1) over bar 1 0] directions with slightly stronger intensity.
Keywords:characterization;defects;X-ray diffraction;metalorganic vapor phase epitaxy;nitrides;semiconducting III-V materials