Titanium boride thin films (TiBx) were deposited on (100) Si substrate by dual-electron-beam evaporation at the substrate temperature of 500 degreesC. This process makes it possible to deposit the non-stoichiometric TIE, film with various desired boron-to-titanium ratios (O less than or equal toB/Ti less than or equal to2.5). It has also been found that the deposition rate and the total film thickness can be controlled within about 5% of the desired value. For as-deposited TIE, films, the resistivity increases gradually with increasing the boron content. The boron-to-titanium ratio has significant effects on the crystalline structure and surface roughness of thin film. The internal stress in all TiBx/Si systems reveal a tensile stress owing to the thermal stress that is generated by the differential thermal expansion between TiBx film and Si substrate during deposition. The variation in film stress as a function of the nominal B/Ti ratio is closely related with the crystalline structure.