We demonstrate the realization of a quantum cascade laser (QCL) based on strained In0.04Ga0.96As/Al0.33Ga0.67As/ GaAs grown on GaAs substrate using molecular beam epitaxy. The material is compared to a GaAs/Al0.33Ga0.67As structure with nominally identical radiative transitions. Lasing at about 10 pm was achieved in the strained and the unstrained material. The strained material shows an improved temperature performance with a T-0 = 112 K between 125 and 200 K and a maximum working temperature of T = 200 K.