We have studied growth of single GaInP layers and AlGaInP/GaInP QW heterostructures on GaAs substrates, which were misoriented 0 degrees, 3 degrees, 10 degrees, and 15 degrees from the (1 0 0) crystal plane toward <1 1 0 >. The samples were grown by solid source MBE (SSMSE), and were characterized by photoluminescence (PL) and the Jeep level transient spectroscopy (DLTS) to investigate their optical properties and nature of deep levels. The samples grown on highly misoriented substrates showed an increase of over 300% and 22% in PL intensity for the bulk GaInP and QW structures, respectively, when compared to nominally identical samples grown on GaAs(1 0 0)-0 degrees substrates. It was also found that growth of AlGaInP on misoriented. substrates required a smaller phosphorous beam equivalent pressure than what was necessary for growth on GaAs (1 0 0)-0 degrees