Electroluminescence (EL) of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well (MQW) diodes lattice-matched to InP substrates grown by molecular beam epitaxy was studied. A type II emission was clearly observed at 2.4 mum at 300 K. Furthermore, the EL intensity of the type II MQW diodes was larger than that of the InGaAs double heterostructure (DH) diodes. Temperature and injection current dependences of the EL spectrum were also investigated.