Two micron AlGaAsSb/InGaAsSb multiple quantum well lasers were grown by solid source molecular beam epitaxy. To avoid strain relaxation in active region, 10 periods multiple quantum well samples with different barrier widths were carefully analyzed, We find that a 15 nm wide barrier is best for Al0.2Ga0.8As0.02Sb0.98/In0.24Ga0.76As0.05Sb0.95 quantum M ells. Five-micron wide ridge waveguide lasers were fabricated. A slope change in power-current characteristics was observed, The emission wavelength switches from 2.01 (corresponding to 1e-1hh transition) to 1.87 mum (corresponding to 2e-2hh transition) as the slope changes.