Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Prior KA; Telfer SA; Tang X; Morhain C; Urbaszek B; O'Donnell C; Tomasini P; Balocchi A; Cavenett BC

Journal of Crystal Growth, Vol.227, 655-659, 2001

DOI10.1016/S0022-0248(01)00792-8 Export Citation

Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Prior KA, Telfer SA, Tang X, Morhain C, Urbaszek B, O'Donnell C, Tomasini P, Balocchi A, Cavenett BC

In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong, broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.

Keywords:X-ray diffraction;molecular beam epitaxy;quantum wells;cadmium compounds;sulfides;zinc compounds;semiconducting II-VI materials