InAs dots were grown by molecular-beam epitaxy on honeycomb hollows formed by anodization of GaAs substrates. It was found that InAs dots were selectively grown at the bottom of honeycomb hollows formed by anodization of GaAs substrates in an NH4OH solution. The average size of InAs dots and its coefficient of variation on anodized substrates were considerably affected by the regularity of hollows, In the case of the growth on a high-ordered hollow array, the average diameter (37.4 nm) and standard deviation (15.3 nm) were comparable to those obtained for InAs dots grown on an unpatterned substrate. On the other hand, in the case of the growth on a low-ordered hollow array, the average diameter (48.0 nm) and standard deviation (19.4 nm) were about 30% larger than those obtained for InAs dots grown on an unpatterned substrate,