Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of any real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thicknesses microcavity light emitting diodes were fabricated. 40 mum diameter devices, as characterized on-wafer, showed narrow electroluminescence spectra (FWHM: 13-26 nm) centered at 1310 1325 mm and narrow circular beam widths of FWHM < 10 degrees were obtained on mounted devices.