Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 mum laser applications is discussed. Long-stripe edge-emitting lasers demonstrate low threshold current density (< 100 A/cm(2)), high differential efficiency (> 50%) and low internal loss (similar to1-2 cm(-1)). Maximum output continuous-wave power for broad-area lasers is as high as 2.7 W. Narrow stripe (7 mum) lasers demonstrate single transverse mode operation with the maximum kink-free power of 110 mW. 1.3 mum vertical cavity surface emitting lasers were successfully fabricated from the structures with three QD planes inserted into the optical microcavity with AlO-GaAs Bragg: reflectors. The output power is 220 mW at a drive current of 2.4 mA under pulsed mode for the device with the 8 x 8 mum oxidized aperture.