We have grown III-V compound semiconductors, such as GaAs, InAs, AlN, and GaN, on SrTiO3 (STO) substrates. Annealing in a UHV chamber at around 700 degreesC effectively reduces surface roughness of STO (1 1 1) and (1 0 0) substrates. We have succeeded in the epitaxial growth of the III-V compound semiconductors on STO substrates using this UHV annealing technique. We found that (1 1 1)is the dominant growth plane for zincblende semiconductors regardless of the crystal symmetry matching between the films and the STO substrates.