A new phase of bismuth indium niobate, the Bi2InNbO7 compound, was grown by the sub-solidus reaction method. Rietveld refinement of the powder X-ray diffraction data revealed that the Bi2InNbO7 compound has the pyrochlore crystal structure, cubic system with space group Fd3m and the lattice parameter is a = 10.7793(2)Angstrom. The optical absorption and electrical properties of Bi2InNbO7 were investigated. It is found that the Bi2InNbO7 compound exhibits a direct gap semiconducting behavior. Conductivity measurement showed that the compound has an activation energy of 2.62(5) eV. UV-vis diffuse reflectance spectroscopy measurement revealed that the band gap of Bi2InNbO7 is about 2.7(4) eV.