A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface

Rehse U; Miller W; Frank C; Rudolph P; Neubert M

Journal of Crystal Growth, Vol.230, No.1-2, 143-147, 2001

DOI10.1016/S0022-0248(01)01325-2 Export Citation

A numerical investigation of the effects of iso- and counter-rotation on the shape of the VCz growth interface

Rehse U, Miller W, Frank C, Rudolph P, Neubert M

The flow in the GaAs and boron oxide melt in an equipment used for the vapour pressure controlled Czochralski (VCz) growth has been calculated. Two-dimensional-axisymmetric calculations have been performed by using the commercial general purpose program FIDAP (TM). The influence of iso- and counter-rotation on the shape of the interface has been studied.

Keywords:computer simulation;convection;Czochralski method;gallium compounds;semiconducting gallium arsenide