화학공학소재연구정보센터
Journal of Crystal Growth, Vol.230, No.1-2, 181-187, 2001
Influence of the growth rate on the segregation in manganese-doped gallium antimonide grown by the vertical Bridgman technique
In this work, manganese segregation in vertical Bridgman grown Mn-doped GaSb ingots has been investigated for three different growth rates. Experimental data of the Mn axial and radial distributions have been obtained and compared with the numerical analysis. Both numerical and experimental results have shown a decreasing radial concentration with the increasing growth rate and a higher concentration of dopant at the centre than at the periphery of the samples.