MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrational and optical properties

As DJ; Frey T; Bartels M; Lischka K; Goldhahn R; Shokhovets S; Tabata A; Fernandez JRL; Leite JR

Journal of Crystal Growth, Vol.230, No.3-4, 421-425, 2001

DOI10.1016/S0022-0248(01)01249-0 Export Citation

MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrational and optical properties

As DJ, Frey T, Bartels M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR

Cubic AlyGa1-yN/GaN heterostructures on GaAS(0 0 1) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, micro-Raman, spectroscopic ellipsometry, and cathodoluminescence measurements were used to characterize the structural, optical and vibrational properties of the AlyGa1-yN epilayers. The AlN mole fraction y of the alloy was varied between 0.07 2001 Elsevier Science B.V. All rights reserved.

Keywords:characterization;high resolution X-ray diffraction;molecular beam epitaxy;quantum wells;gallium compounds;nitrides