We have studied the luminescence properties of GaN LEDs by electroluminescence microscopy (ELM) and micro-electroluminescence (mu -EL) spectroscopy. Spatial inhomogeneity in the deep level region of the spectra is observed in spectrally resolved ELM images. Room temperature mu -EL spectra measured from 5 x 5 mum(2) regions show anticorrelation of the defect-related recombination (E = 1.95-2.45 eV) with the band-edge emission (E = 3.18 eV).