화학공학소재연구정보센터
Journal of Crystal Growth, Vol.230, No.3-4, 522-526, 2001
Analysis of the threshold current in nitride-based lasers
Using optical gain measurements and calculated optical gain spectra we analyse the various contributions to the threshold current observed for laser diodes. Our model is based on band-to-band transitions and includes internal polarization fields as well as multiple quantum wells. Besides good agreement between experiment and theory, our model explains the characteristic dependence of the threshold current on emission wavelength and well number.