In this article, multiple-step rapid thermal annealing (RTA) processes for the activation of Mg doped GaN are compared with conventional single-step RTA processes. The investigated multiple-step processes consist of a low temperature annealing step at temperatures between 350 degreesC and 700 degreesC with dwell times up to 5 min and a short time high temperature step. With optimized process parameters, and multiple-step processes, we achieved p-type free carrier concentrations up to 1-2 x 10(18) cm(-3). The best achieved conductivity, so far, lies at 1.2 Omega (-1) cm(-1). This is a 50% improvement compared to conventional single-step process at 800 degreesC, 10 min.