Mn-doped ZnSe was epitaxially grown on GaAs (001) single crystals by using MOVPE method. PL spectra taken at room temperature show orange emission peaked at 580nm for all Mn-doping levels. However, the peaks of PL spectrum at 30 K were 550 nm for low levels of Mn-doping and 630 nm for high levels of Mn-doping. From PL and PLE experiments, the emission bands peaked at 550 and 630 nm seem to be due to the transition from T-4(2) to (6)A(1) of 3d electron of the Mn atom and that from T-4(1) to (6)A(1), respectively.