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Journal of Crystal Growth, Vol.233, No.3, 417-424, 2001
Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension
The oxygen partial pressure around a molten silicon drop was determined from the inlet (P-O2(inlet))and outlet (P-O2(exit)) pressures of a furnace under precisely controlled gas flow rate. It was found that P-O2(exit) is much lower than P-O2(inlet) and that measured P-O2(exit) depends on gas flow rate, but P-O2(inlet) does not. This dependence can be explained by an oxygen transfermodel using the Peclet number.
Keywords:surfaces;semiconducting silicon