Al(x)Gal(1-x)Sb bulk crystals have been grown using a GaSb seed crystal by Czochralski method using a double crucible set-up. The observation of growth induced compositional inhomogenity of Al in the grown crystals has been reported. The Al composition as a whole gradually reduced in the grown crystals. But, in the macrosteps, the composition of Al was higher along the riser and lower along the tread. This has been explained by considering the difference in the step velocity on the riser and the tread of the macrostep. Al incorporation into the GaSb seed has also been observed and this has been explained to be due to the occurrence of diffusion, melt and regrowth processes.