ZnCdTe-ZnTe quantum wells (QWs) have been grown on Si (1 0 0) substrates in a horizontal-type low-pressure metalorganic chemical vapor deposition (MOCVD) system. An oriented ZnO thin film with a smooth surface was employed to be the bufferlayer for the growth. Scanning electron microscopy (SEM) patterns showed that the ZnO bufferlayer improved the smoothness of the sample. The photoluminescence (PL) spectra of the QWs with and without ZnO layer were studied. The great enhancement of the emission efficiency of the one with ZnO layer indicated that the quality of the epilayer was improved.