Zinc selenide- and phosphorus-doped zinc selenide have been grown in sealed quartz tube by physical vapour transport technique without any transporting agent. For better transport of starting material, the pure and proper stoichiometric sample has been prepared in the first step. The growth has been achieved using Schieber's [9] conditions. The largest crystal measures a size of 9 x 5 x 5 mm(3), The Hall mobility is measured at room temperature and found to be 510 (cm(2)/V s) for pure ZnSe and 340 (cm(2)/V s) for doped ZnSe. The variance of mobility with temperature is also measured. The single crystalline nature is verified using SEM and X-ray Laue photograph. Etch pit densities on (1 1 1) plane is similar to10(5) cm(-2). The results are compared with the existing data. (C) 2002 Published by Elsevier Science B.V.