This paper presents the single crystal growth of mixed crystals of bismuth germanium oxide-bismuth silicon oxide from their solid solution by the Czochralski technique. By employing suitable rotation rate, pulling rate and appropriate temperature gradient good quality bismuth germanium silicon oxide crystals (hereinafter abbreviated as BGSO) have been grown. Grown crystal was subjected to the powder and single crystal X-ray diffraction studies. Lattice parameter has been computed from single crystal X-ray diffraction. Differential thermal analysis has been carried out and the melting temperature of the crystal was found to be 1054degreesC and the composition of the grown crystal has been studied by EDX analysis. (C) 2002 Elsevier Science B.V. All rights reserved.