InN thin films were grown on (0 0 0 1) sapphire substrates at 400degreesC by N-2 glow discharge plasma-assisted pulsed laser deposition using elemental In as a target. X-ray diffraction (XRD) showed that the InN dims consisted of a predominant zincblend (ZB) structure along with a low-intensity hexagonal wurtzite (WZ) peak. The full-width at half-maximum of the (002) ZB peak was about 0.5degrees in high-resolution XRD pattern. The lattice constant after tilt correction was found to be 5.09 +/- 0.04 Angstrom. Scanning electron micrograph of the InN thin films showed a granular-type 9 surface morphology. The presence of both ZB and WZ phases was confirmed by Raman spectra. (C) 2002 Elsevier Science B.V. All rights reserved.