The growth of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing was investigated. The implanted Si wafers were annealed for various durations at 1350degreesC. Diffraction streaks at 0.50.5L (L similar to 1) of Si were observed from these samples. The intensity of the streak gradually increased with annealing time, while the peak position and the width of the streak did not change. Referring to these results, the growth of the buried oxide layers is discussed in terms of the ordered structure. (C) 2002 Elsevier Science B.V. All rights reserved.