We have examined the influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition on InP or GaAs substrate. It was found that the hydrogen concentration in C-doped In0.53Ga0.47As grown on GaAs substrate was lower than that on InP substrate, which results in a decrease in sheet resistance of C-doped In0.53Ga0.47As gown on GaAs. This might be because hydrogen incorporation into C-doped In0.53Ga0.47As was suppressed by high-density dislocation. (C) 2002 Elsevier Science B.V. All rights reserved.