Space-grown GaSb single crystal doped with Te was investigated by X-ray projection topography and high-resolution triple crystal diffractometry. It was shown that a large part of the sample grown without contacting the crucible is of rather high perfection: it is striation free and only few dislocation lines are present there. However, it was found that large microdefects (exceeding 1 mum in diameter) are present, their density being - 4 x 104 Cm-1. Nevertheless, the number of small microdefects (smaller than 1 mum in diameter) is considerably less than that in terrestrially grown GaSb. A twin boundary was found between this space-grown and the other part-grown in contact with the ampoule walls. Besides the twin, it was found that dislocations at a density up to similar to 10(4) cm(-3) were generated. The end part of the ingot contains dislocations with a density higher than 106 Cm-1, which were induced due to high thermal stresses at the final stage of crystallization. (C) 2002 Elsevier Science B.V. All rights reserved.