The results of real-time X-ray reflectivity measurements of MOVPE grown indium phosphide surface are presented. At the low growth temperature of 450degreesC, large decreases of reflectivity were observed. Suggesting the formation of indium islands. At higher growth temperature of 550degreesC, only small changes were observed at high growth rate, indicating the step-flow growth mode. Oscillations longer than mono-layer growth were also observed at 500degreesC and 550degreesC, and roughness changes obtained from these oscillations were less than 0.01-nm suggesting small islands formation on the terrace or step-edge fluctuation during the growth. (C) 2002 Elsevier Science B.V. All rights reserved.