Single-crystal line La3Ga5SiO14 (LGS) films could be grown by liquid phase epitaxy (LPE) for the first time. These films were obtained on X-and Y-oriented LGS substrates (homoepitaxy) from a PbO-based flux, and were characterized by Nomarski microscopy, AFM, SEM/EDX and XRD. Best results were obtained for Y-oriented films, with macrosteps propagating over macrosopic dimensions (> 1 x 1 cm(2)). Very flat areas with height variations within 1.4 nm over 8 pm lateral distance were measured by AFM. These films have a thickness of a few micrometer, Lire crack-free due to perfect lattice match, and no solvent inclusions or secondary phases were found. (C) 2002 Elsevier Science B.V. All rights reserved.