Gd3Ga5O12 (GGG) polycrystallinc starting material was prepared by solid-state reaction of parent oxides. which was pre-reacted at 1350degreesC for 15 h in air, then was sintered at 1650degreesC for 3 h. The pure GGG phase was readily confirmed through XRD measurement. GGG single crystal was grown from as obtained polycrystalline material with pure phase by Czochralski technique. The homogeneity of GGG single crystal was examined by XRD and X-ray fluorescence analysis methods. The results showed that the distribution of Ga in crystal was nearly Unity. Dislocation density of the GGG crystal was less than 10/cm(2), as observed by chemical etch experiment. Our experiments suggested that using pure phase polycrystalline charge and neutral growth atmosphere, large size and high quality GGG single crystal could be grown by Czochralski technique. (C) 2002 Elsevier Science B.V. All rights reserved.