In a previous study, we have found that lattice matching is essential to grow high quality thick Al1-xInxN on GaN epilayer. In this study, in a coherent growth regime, it is found that high-quality Al1-xInxN with different composition can be successfully grown on the GaN epilayer. The surface morphology and the roughness of very thin Al1-xInxN grown on GaN epilayer were similar regardless of the InN molar fraction v in the range from 0.07 to 0.34. (Al1-xInxN/GaN)(5) thin multiple layers were grown on the GaN epilayer. All samples show atomically flat interfaces which was confirmed by X-ray diffraction measurement and transmission electron microscopy. (C) 2002 Elsevier Science B.V. All rights reserved.