Local structures around In atoms in 0.2 mum-thick grown GaInN layers were studied by fluorescence EXAFS measurements. Local In composition around In atoms was discussed from the results of EXAFS measurements. The local In composition was about 0.5 and 1 for the samples, the average compositions of which were 0.08 and 0.42, respectively. The values were much larger than the average ones. The result indicated that In atoms are segregated. (C) 2002 Elsevier Science B.V. All rights reserved.