We have grown p-type ZnTe films on (1 0 0) ZnTe at a relatively low growth temperature by atmospheric pressure metal organic vapor phase epitaxy using triethylarsine. The dopant transport rate and the transport rate ratio of diethyl telluride to dimethylzine strongly influence the photoluminescence spectrum of the film. Even for the film grown at low dopant transport rate of 0.01 mumol/min, the spectrum is characterized by the excitonic emission and free-to-bound transition emission due to arsenic acceptors. For such a low dopant transport rate, the use of Zn-rich condition almost vanishes the luminescence, just Eke the case of high dopant transport rate. The Zn-rich condition seems to facilitate the incorporation of arsenic into a shallow, acceptor site. The electrical properties for several films have also been investigated. (C) 2002 Elsevier Science B.V. All rights reserved.