Journal of Crystal Growth, Vol.237, 1752-1756, 2002
The axial and radial segregation due to the thermo-convection, the decrease of the melt in the ampoule and the effect of the precrystallization-zone in the semiconductor crystals grown in a Bridgman-Stockbarger system in a low gravity environment
In this paper, we give a model based simulation Of the evolution of axisymmetric flow. heat transport and Ga dispersion in the melt and we predict the axial and radial Ga distribution in a Ga-doped Ge semiconductor crystal grown in a low gravity environment using the Bridgman-Stockbarger growth method. (C) 2002 Elsevier Science B.V. All rights reserved.