Results of a numerical simulation study for the traveling heater method (THM) growth of single crystals are presented. It is found that the position of the thermal profile has a profound effect oil the characteristics and stability of the growing crystal. To suppress the convective flow in the solution, various levels of the applied magnetic field and the magnetic field misalignment were considered. Results indicate that there is all upper limit of the level of misalignment I above which the growth interface may lose its stability. The convective flow due to such misalignment gives rise to a mixing in the horizontal plane, which is beneficial for the growth process. A fixed field of about 2 T is sufficient to reduce the effect of gravity significantly. (C) 2002 Elsevier Science B.V. All rights reserved.