beta-FeSi2 layers were grown on Si(1 1 1) substrates by reactive deposition epitaxy under the presence of an Sb flux. The growth evolution of the beta-FeSi2 layers and the growth condition dependence of the structural property were examined to clarify the growth mechanism. It has been found that the crystalline quality and the morphology of the layers grown Under the presence of an Sb flux are improved in comparison to those grown under the absence of an Sb flux. The epitaxial relationship and internal strain between the beta-FeSi2 layers and the Si(1 1 1) substrates have also been investigated. (C) 2002 Elsevier Science B.V. All rights reserved.