Single crystalline beta-FeSi2 with a low carrier density has been grown by a temperature gradient solution growth method using Zn solvent. The crystals were polyhedral with clear growth facets. Hall measurements revealed that the crystals showed p-type conductivity. The hole concentration and Hall mobility at room temperature were about 4 x 10(17) cm(-3) and about 19 cm(2)/Vs, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.