A version of the hot-wall reactor, where rotation has been added is investigated for the growth of SiC. The capacity of the reactor is 2 in wafers. The rotation is realized by gas foil levitation of a single plate carrying all three wafers. Uniformities of thickness and doping below 1% and 5%, respectively have been obtained. The run to run reproducibility of n-type doping is within +/-10%. The morphology is studied and greatly improved through a modification of the hot-zone, which however made the thickness uniformity marginally worse. (C) 2002 Published by Elsevier Science B.V.