Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Fedler F; Hauenstein RJ; Klausing H; Mistele D; Semchinova O; Aderhold J; Graul J

Journal of Crystal Growth, Vol.241, No.4, 535-542, 2002

DOI10.1016/S0022-0248(02)01324-6 Export Citation

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Fedler F, Hauenstein RJ, Klausing H, Mistele D, Semchinova O, Aderhold J, Graul J

We report on morphological and residual-strain characteristics of high-AlN-mole-fraction N-polar AlxGa1-xN epilayers on sapphire. Nominally relaxed, thick single-alloy layers in the compositional range 0.4

Keywords:crystal morphology;high resolution X-ray diffraction;nitrides