In0.53Ga0.47As/GaAs0.5Sb0.5 type 11 multiple quantum well (MQW) structures were grown on (111)B InP substrates by molecular beam epitaxy, and their electrical and optical properties were compared with those of InGaAs/GaAsSb MQW structures grown on (100) InP substrates. Hall measurements show that the electron mobility of the (I I I)B sample is higher than that of the (100) sample. It has become clear from photoluminescence (PL) measurements that the PL intensity of the (111)B sample is comparable to that of the (100) sample, and that the full-width at half-maximum of the (111)B sample is narrower than that of the (100) sample. The PL peak wavelength of the (111)B sample was found to be longer than that of the (10 0) sample, which can be explained by the energy difference of heavy hole quantum level between the (111) and (100) samples. (C) 2002 Elsevier Science B.V. All rights reserved.