The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (001) InP at low growth temperature of 330-450degreesC. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has a strong anisotropy in [110] direction especially at low growth temperature (T-g < 400degreesC). This indicated that kink density was high in [110] direction on InP (001) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high. (C) 2002 Elsevier Science B.V. All rights reserved.