The area-selective epitaxy (ASE) and epitaxial lateral overgrowth (ELO) were performed on {0 0 1}-, {1 1 1)A,B- and {1 1 0}-oriented InP by liquid phase epitaxy at constant growth temperature (450-650degreesC). The as-grown surface and cross section were investigated by Nomarski interference optical microscope, SEM and confocal laser scanning microscope. From the cross sectional structure, area-selective epitaxy and ELO layers have shown {1 0 0} and {1 1 1}A,B facets on these surface. When compared with three integral axes, the vertical growth rate on {1 1 0} plane is the fastest among the three integral axes. According to the observations of cross sectional shape, the orientation dependence of vertical growth rate was determined to be {1 1 0} > {1 1 1}A,B > {1 0 0} under the present experimental conditions. (C) 2002 Elsevier Science B.V. All rights reserved.