Ba(ZrxTi-x)O-3 (BZ(x)T(1-x) for short) thin films deposited by RF magnetron sputtering on Pt/Ti/SiO2/Si substrates were studied. X-ray diffraction, scanning electron microscopy, energy dispersive spectrometry and profilometry were utilized to study the deposition characteristics and crystal structure of the BZ(x)T(1-x) thin film. The BZ(x)T(1-x) thin film sputtered at RF power = 130 W has a maximum deposition rate. The deposition rate of the BZ(x)T(1-x) thin films decreases with increasing working pressure and O-2/(O-2 + Ar) ratio. The effects of the O-2/(O-2 + Ar) ratio, RF power and working pressure on the Zr/(Zr+Ti) ratio of the BZ(x)T(1-x) thin films are not very significant. When sputtered at substrate temperature = 300degreesC and RF power = 100W, the BZ(x)T(1-x) thin films are amorphous and transforms to the crystalline BaZrxTi1-xO3 phase with a (100) preferred orientation when the RF power increases from 100 to 160 W. The surface of the BZ(x)T(1-x) thin films is relatively smooth and dense and has columnar structure. (C) 2002 Elsevier Science B.V. All rights reserved.