We report the structural properties of strained InGaAs/GaAs double confinement quantum well (QW) structures grown on (111)A GaAs by metalorganic vapor phase epitaxy. The structures were extensively analyzed by photoluminescence (PL) spectroscopy. High-resolution X-ray diffractometry (HRXRD) and transmission electron microscopy (TEM). Excellent interfacial characteristics and uniformly strained structures with no compositional modulation were obtained for [111]A-oriented QWs with well widths of 65-100Angstrom containing up to similar to20%. In grown over a range of growth temperatures and V/III ratios. HRXRD analyses also show that the InGaAs well layers are pseudomorphic. A narrow PL full-width-at-half-maximum (FWHM) of 7 meV at 12 K was achieved for a QW structure grown at 630degreesC with a V/III ratio of 260. A monolayer (ML) analysis of PL FWHM data indicates a well width fluctuation of +/-1 ML, which is consistent with TEM observations showing a well width fluctuation of less than +/-2ML. The well width fluctuation values of [111]A QWs are in the range of +/-(1-2) ML for growth temperatures of 630degreesC and 680degreesC with V/III ratios between 105 and 260, while for simultaneously grown [100]-oriented structures the fluctuations are in the range +/-2 to over +/-4 ML, depending on the V/III ratio. (C) 2002 Published by Elsevier Science B.V.