We have studied the electrical transport properties of ordered InxGa1-xP grown on GaAs substrate using temperature-dependent (5-300 K) conductiity and Hall effect measurements. Intentionally undoped InxGa1-xP layers. with x(In) ranging from 0.39 to 0.55, were prepared by low-pressure OMVPE at a growth temperature of 640degreesC. Different behaviour of transport properties in [011] and [011] crystallographic directions was observed in samples with different mismatch. The transport anisotropy is connected with the existence of misfit lines in already slightly mismatched layers. Samples with lines oriented in the [011] direction are in this direction more conductive and they exhibit in this direction significant decrease of resistance with decreasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.