The incorporation and doping process of Si, S and Zn impurities in InP by metalorganic vapor phase epitaxy have been studied both in standard growth conditions (SGC) and in selective area growth (SAG) conditions using silane (SiH4), hydrogen sulphide (H2S) and diethylzinc (DEZn). It as observed that in SGC, the dopant species behaviour, for two different growth rates. is in line with the expectations from the model and sonic previous reports made on doped GaAs and InP. On the other hand. in SAG conditions, the Si concentration was unexpectedly independent of the growth rate. Furthermore. the Zn and S codoping shows a Zn dopant concentration enhancement in SAG conditions, while it remains constant in SGC. These differences in behaviour are induced by the addition of dopant species transported by lateral vapour phase diffusion from the patterned region to the open region, (C) 2002 Elsevier Science B.V. All rights reserved.