In this work we present a study on the determination of N and In content in (Ga(1-y)Inx)(NyAs(1-y)) material system and discuss the incorporation behavior Cor metal-organic vapor phase epitaxy (MOVPE)-growth. An electrically pumped MOVPE-grown vertical-cavity surface-emitting lasers on GaAs substrate with a (GaIn)(NAs) active region emitting single-mode at 1293 nm with record characteristics is presented. The cw output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realized. (C) 2002 Published by Elsevier Science B.V.