Homoepitaxial growth of 4H-SiC(03(3) over bar 8) by hot-wall chemical vapor deposition has been investigated. The 4H-SiC(03(3) over bar 8 3 18) is inclined by 54.74degrees toward [01(1) over bar 0] from (0 0 0 1), which is semi-equivalent to (0 0 1) in a zincblende structure. 4H-SiC homoepitaxial layers with a specular surface can be obtained on 4H-SiC(03(3) over bar 8) without intentional off angle. The lowest donor concentration of undoped 4H-SiC(03(3) over bar 8) epilayers was 3 x 10(14) cm(-3). The doping efficiency of nitrogen on 4H-SiC(03(3) over bar 8) was similar to that on 4H-SiC(11(2) over bar 0), which is in between that on off-axis (0 0 0 1) and (0 0 0 T) faces. Growth results on this novel face are compared with those on off-axis {0 0 0 1} and (11(2) over bar 0) from viewpoints of growth mechanism and impurity doping. (C) 2002 Elsevier Science B.V. All rights reserved.