화학공학소재연구정보센터
Journal of Crystal Growth, Vol.250, No.1-2, 94-99, 2003
Crystal growth of Yb3+-doped oxide single crystals for scintillator application
Long emission wavelength scintillators are strongly required from the viewpoint of the practical use of silicon photodiode, which has higher resolution with lower cost compared with photo-multipllier. Among the various scintillator emission centers, we regard emission from Yb3+ charge-transitions state (CTS) as a candidate. In order to investigate proper hosts for Yb3+ CTS, the yttrium gallium garnet host and lutetium aluminum garnet host were studied. Transparent and crack-free heavily Yb-doped YGG, i.e. {Y1-xYbx}(3)[Ga](2)(Ga)(3)O-12 (Yb: YGG, x = 0.15, 0.5, 1.0) and heavily Yb-doped LuAG, i.e. {Lu1-xYbx}(3)[Al](2)(Al)(3)O-12 (Yb: LuAG, x = 0.15,0.5, 1.0) single crystals could be grown by the Modified Pulling Down method with < I I I > orientation. Emission, excitation spectra and decay kinetics were measured for these crystals. The CT transition of Yb3+ in the yttrium gallium garnet host was discussed compared with the Yb3+ one in the lutetium aluminum garnet host. (C) 2002 Elsevier Science B.V. All rights reserved.